The Focus-Induced Photoresponse (FIP) enables 3D sensing capabilities by evaluating the irradiance dependent non-linear detector response in defect-based materials. Since this advantage is intricately associated to a slow response, the electrical bandwidth of previous FIP sensors is limited to a few kHz only. We report the FIP in amorphous silicon pin photodiodes and propose a sensor read out based on a harmonics analyses. We achieve modulation frequencies of 500 kHz and a non-linear beat frequency detection up to at least 3.5 MHz, surpassing the bandwidth of state-of-the-art architectures by at least a factor of 175. The FIP sensors further achieve signal-to-noise ratios of ∼50 dB, depth resolutions of at least 5.4 mm at 126 cm and a DC FIP detection limit of 1.3 μW/mm2.