Müller, Maurice
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Publication Access status: Metadata only , Graphene-Based Optoelectronic Mixer Device for Time-of-Flight Distance Measurements for Enhanced 3D Imaging ApplicationsA large and growing number of applications benefit from innovative and powerful 3D image sensors. Graphene photodetectors can achieve 3D sensing functionalities by intrinsic optoelectronic frequency mixing due to the nonlinear output characteristics of the sensor. In first proof of principle distance measurement demonstrations, we achieve modulation frequencies of 3.1 MHz, signal-to-noise ratios of ∼40 dB, distance detection up to at least 1 m, and a mean accuracy of 25.6 mm. The scalable More than Moore detector approach enables geometrical fill factors close to 100% and can easily complement powerful functionalities by simple back-end integration on top of CMOS electronics.Source Type:Article - Some of the metrics are blocked by yourconsent settings
Publication Access status: Metadata only , High Responsivity and Ultra-Low Detection Limits in Nonlinear a-Si:H p-i-n Photodiodes Enabled by PhotogatingPhotodetectors operating at the wavelength in the visible spectrum are key components in high-performance optoelectronic systems. In this work, massive nonlinearities in amorphous silicon p-i-n photodiodes enabled by the photogating are presented, resulting in responsivities up to 744 mA/W at blue wavelengths. The detectors exhibit significant responsivity gains at optical modulation frequencies exceeding MHz and a more than 60-fold enhanced spectral response compared to the non-gated state. The detection limits down to 10.4 nW/mm 2 and mean signal-to-noise ratio enhancements of 8.5 dB are demonstrated by illuminating the sensor with an additional 6.6 µW/mm 2 red wavelength. Electro-optical simulations verify photocarrier modulation due to defect-induced field screening to be the origin of such high responsivity gains. The experimental results validate the theory and enable the development of commercially viable and complementary metal oxide semiconductor (CMOS) compatible high responsivity photodetectors operating in the visible range for low-light level imaging and detection.Source Type:Article1 - Some of the metrics are blocked by yourconsent settings
Publication Access status: Open Access , Intrinsic photomixing detector based on amorphous silicon for envelope mixing of optical signalsIn this work, a promising device for direct optical envelope mixing, the Intrinsic Photomixing Detector (IPD) based on hydrogenated amorphous silicon, is reported. The IPD directly generates a photocurrent proportional to the nonlinear mixing of two optical modulation envelope functions. Experiments illustrate efficient mixing in the visible range at low light levels down to ϕ1 = 4.36 mW/cm2 (444 nm) and ϕ2 = 1.03 mW/cm2 (636 nm). Modulation frequencies exceeding the MHz range are demonstrated. Electro-optical simulations identify defectinduced electrical field screening within the absorber to cause the nonlinear mixing process, opening-up the opportunity to tailor devices toward application-specific requirements. The IPD functionality paves the way toward very simple but high-performance photodetectors for 3D imaging and ranging for direct optical convolutional sensors or for efficient optical logic gates. Using amorphous silicon provides a photodetector material base, which can easily be integrated on top of silicon electronics, enabling fill factors of up to 100%.Source Type:Article294 185
