Müller, Maurice
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Publication Access status: Metadata only , Graphene-Based Optoelectronic Mixer Device for Time-of-Flight Distance Measurements for Enhanced 3D Imaging ApplicationsA large and growing number of applications benefit from innovative and powerful 3D image sensors. Graphene photodetectors can achieve 3D sensing functionalities by intrinsic optoelectronic frequency mixing due to the nonlinear output characteristics of the sensor. In first proof of principle distance measurement demonstrations, we achieve modulation frequencies of 3.1 MHz, signal-to-noise ratios of ∼40 dB, distance detection up to at least 1 m, and a mean accuracy of 25.6 mm. The scalable More than Moore detector approach enables geometrical fill factors close to 100% and can easily complement powerful functionalities by simple back-end integration on top of CMOS electronics.Source Type:Article - Some of the metrics are blocked by yourconsent settings
Publication Access status: Open Access , Intrinsic photomixing detector based on amorphous silicon for envelope mixing of optical signalsIn this work, a promising device for direct optical envelope mixing, the Intrinsic Photomixing Detector (IPD) based on hydrogenated amorphous silicon, is reported. The IPD directly generates a photocurrent proportional to the nonlinear mixing of two optical modulation envelope functions. Experiments illustrate efficient mixing in the visible range at low light levels down to ϕ1 = 4.36 mW/cm2 (444 nm) and ϕ2 = 1.03 mW/cm2 (636 nm). Modulation frequencies exceeding the MHz range are demonstrated. Electro-optical simulations identify defectinduced electrical field screening within the absorber to cause the nonlinear mixing process, opening-up the opportunity to tailor devices toward application-specific requirements. The IPD functionality paves the way toward very simple but high-performance photodetectors for 3D imaging and ranging for direct optical convolutional sensors or for efficient optical logic gates. Using amorphous silicon provides a photodetector material base, which can easily be integrated on top of silicon electronics, enabling fill factors of up to 100%.Source Type:Article294 185
