Müller, Maurice
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Publication Access status: Open Access , High-speed focus-induced photoresponse in amorphous silicon photodetectors for optical distance measurementsThe Focus-Induced Photoresponse (FIP) enables 3D sensing capabilities by evaluating the irradiance dependent non-linear detector response in defect-based materials. Since this advantage is intricately associated to a slow response, the electrical bandwidth of previous FIP sensors is limited to a few kHz only. We report the FIP in amorphous silicon pin photodiodes and propose a sensor read out based on a harmonics analyses. We achieve modulation frequencies of 500 kHz and a non-linear beat frequency detection up to at least 3.5 MHz, surpassing the bandwidth of state-of-the-art architectures by at least a factor of 175. The FIP sensors further achieve signal-to-noise ratios of ∼50 dB, depth resolutions of at least 5.4 mm at 126 cm and a DC FIP detection limit of 1.3 μW/mm2.Source Type:Article318 73 - Some of the metrics are blocked by yourconsent settings
Publication Access status: Open Access , High-speed nonlinear focus-induced photoresponse in amorphous silicon photodetectors for ultrasensitive 3D imaging applicationsA large and growing number of applications benefit from simple, fast and highly sensitive 3D imaging sensors. The Focus-Induced Photoresponse (FIP) can achieve 3D sensing functionalities by simply evaluating the irradiance dependent nonlinear sensor response in defect-based materials. Since this advantage is intricately associated to a slow response, the electrical bandwidth of present FIP detectors is limited to a few kHz only. The devices presented in this work enable modulation frequencies of 700 kHz and beat frequency detection up to at least 3.8 MHz, surpassing the bandwidth of reported device architectures by more than two orders of magnitude. The sensors achieve a SNR of at least ∼53dB at 115cm and a DC FIP detection limit of 0.6 µW/mm2. The mature and scalable low-temperature a-Si:H process technology allows operating the device under ambient air conditions waiving additional back-end passivation, geometrical fill factors of 100% and tailoring the FIP towards adjustable 3D sensing applications.Source Type:Article266 242 - Some of the metrics are blocked by yourconsent settings
Publication Access status: Open Access , Intrinsic photomixing detector based on amorphous silicon for envelope mixing of optical signalsIn this work, a promising device for direct optical envelope mixing, the Intrinsic Photomixing Detector (IPD) based on hydrogenated amorphous silicon, is reported. The IPD directly generates a photocurrent proportional to the nonlinear mixing of two optical modulation envelope functions. Experiments illustrate efficient mixing in the visible range at low light levels down to ϕ1 = 4.36 mW/cm2 (444 nm) and ϕ2 = 1.03 mW/cm2 (636 nm). Modulation frequencies exceeding the MHz range are demonstrated. Electro-optical simulations identify defectinduced electrical field screening within the absorber to cause the nonlinear mixing process, opening-up the opportunity to tailor devices toward application-specific requirements. The IPD functionality paves the way toward very simple but high-performance photodetectors for 3D imaging and ranging for direct optical convolutional sensors or for efficient optical logic gates. Using amorphous silicon provides a photodetector material base, which can easily be integrated on top of silicon electronics, enabling fill factors of up to 100%.Source Type:Article294 185 - Some of the metrics are blocked by yourconsent settings
Publication Access status: Open Access , Nonlinear Amorphous Silicon Photodetectors for Distance Ranging(2026)Imaging is a leading instrumentation technique for a vast range of applications. Among others, it is used for scene recognition in autonomous driving, robotics, the medical sector and in smartphones. Besides classical color imaging of two-dimensional (2D) planes, precise and accurate distance ranging is one advancing imaging modality, expanding imaging towards three dimensional (3D) depth sensing. Beyond image quality, high density integration of these image sensors into miniaturized systems, even on a single chip, is a major driver of ongoing development. State-of-the-art distance ranging and 3D imaging techniques are Time-of-Flight (ToF) and Triangulation. Both techniques face challenges in terms of small scale integration capabilities. Typical triangulation-based systems require a specific baseline distance in the cm-range, which is not suitable for monolithic chip integration. ToF-systems can be integrated on a single chip, but its principle requires high precision timings in the sub-ns range, advanced beam steering or complex circuity. Here, developments and achievements on photodetectors based on hydrogenated amorphous silicon (a-Si:H) capable for distance ranging and future 3D imaging are presented. The a-Si:H manufacturing technology at temperatures < 300°C is compatible with the standard CMOS. This approach enables the integration of sensors directly on top of a chip in the back end of line with high geometrical fill factors. The distance ranging operation exploits the nonlinear device behavior with respect to the optical excitation scenario. Based on simulations and subsequent experimental validations, two nonlinear mechanisms and their respective physics are systematically investigated, analyzed and developed towards individual distance ranging techniques. The a-Si:H Focus-Induced Photoresponse (FIP) measures nonlinear current response variations originating from an amplitude-modulated monochromatic optical excitation. The distance is acquired by a frequency selective readout of the nonlinear, focus-dependent sensor signal. Distance resolutions down to 540 μm are achieved, allowing for precise ranging at low measurement and integration effort. The a-Si:H Intrinsic Photomixing Detector (IPD), utilizes an envelope mixing process of two amplitude modulated optical excitations. Thereby, the Time-of-Flight information is transferred to a lower frequency domain, enabling a read-out. This mixing takes place intrinsically within the detector and decreases the measurement complexity. Distance measurements are shown at > 70 m with depth resolutions down to 23 mm, which is comparable with commercial systems. Developments on advanced device concepts are studied and discussed. These concepts systematically improve the sensitivity, spectral bandwidth and speed of the detectors.Source Type:Doctoral ThesisSeries:Höchstfrequenztechnik und QuantenelektronikVolume number:131 823