Citation Link: https://nbn-resolving.org/urn:nbn:de:hbz:467-1336
Development of a low noise integrated readout electronic for pixel detectors in CMOS technology for a Compton camera
Source Type
Doctoral Thesis
Author
Institute
Issue Date
2002
Abstract
Semiconductor detectors are very popular, particularly for their
good energy resolution and their easy handling. Combined with a two
dimensional spatial resolution such a detector is predestined to realise an
active collimation in a Compton camera for medical applications. To
measure the deposited energy in each channel (pixel), a self-triggering
integrated electronic has been developed, which is directly bonded on top
of the detector. The design of the low noise readout electronic ('Ramses')
for a 32 x 32 matrix of 150 µm x 150 µm pixels, the layout and measurements
are presented. Closest attention is paid to silicon detectors, which
are favoured for Compton scattering with regard to Doppler effect.
Nevertheless the electronic chip is also designed to measure the energy deposited
by photo absorption in a detector material with higher atomic numbers (GaAs, CdTe).
good energy resolution and their easy handling. Combined with a two
dimensional spatial resolution such a detector is predestined to realise an
active collimation in a Compton camera for medical applications. To
measure the deposited energy in each channel (pixel), a self-triggering
integrated electronic has been developed, which is directly bonded on top
of the detector. The design of the low noise readout electronic ('Ramses')
for a 32 x 32 matrix of 150 µm x 150 µm pixels, the layout and measurements
are presented. Closest attention is paid to silicon detectors, which
are favoured for Compton scattering with regard to Doppler effect.
Nevertheless the electronic chip is also designed to measure the energy deposited
by photo absorption in a detector material with higher atomic numbers (GaAs, CdTe).
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