Yang, Nianjun
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Publication Access status: Metadata only , Covalently‐Bonded Diaphite Nanoplatelet with Engineered Electronic Properties of Diamond(2024); ; ; ; Diamond, as a highly promising “extreme” semiconductor material, necessitates electronic property engineering to unleash its full potential in electronic and photonic devices. In this work, the diaphite nanoplatelet, consisting of (11) planes of diamond nanoplatelet covalently bonded with graphite (0001) planes, is facilely synthesized using one‐step microwave plasma enhanced chemical vapor deposition method. The high‐energy plasma created by the pillar plays a crucial role in the formation. Importantly, altered electronic and optical properties are determined in the diaphite nanoplatelet through electron energy loss spectrum, density functional theory calculations, and cathodoluminescence spectroscopy. It is revealed that the strong sp 3 /sp 2 ‐hybridized interfacial covalent bonding in the diaphite nanoplatelet induces the electron transfer from diamond to graphite. This modulates the electronic structure of the near‐interface layer of diamond and triggers a new local trapping band below the conduction band minimum within the bandgap. Consequently, the covalently‐bonded diaphite exhibits a different optical emission characteristic ranging from 2.5 to 3.64 eV, featuring a significant peak blueshift of 430 meV compared to the H‐terminated diamond. This work demonstrates a novel method to engineer the electronic properties of diamond, opening avenues for functional semiconductor device applications of diamond.Source Type:Article1 - Some of the metrics are blocked by yourconsent settings
Publication Access status: Metadata only , Interlayer Affected Diamond Electrochemistry(2024); ; ; ; Diamond electrochemistry is primarily influenced by quantities of sp 3 ‐carbon, surface terminations, and crystalline structure. In this work, a new dimension is introduced by investigating the effect of using substrate‐interlayers for diamond growth. Boron and nitrogen co‐doped nanocrystalline diamond (BNDD) films are grown on Si substrate without and with Ti and Ta as interlayers, named BNDD/Si, BNDD/Ti/Si, and BNDD/Ta/Ti/Si, respectively. After detailed characterization using microscopies, spectroscopies, electrochemical techniques, and density functional theory simulations, the relationship of composition, interfacial structure, charge transport, and electrochemical properties of the interface between diamond and metal is investigated. The BNDD/Ta/Ti/Si electrodes exhibit faster electron transfer processes than the other two diamond electrodes. The interlayer thus determines the intrinsic activity and reaction kinetics. The reduction in their barrier widths can be attributed to the formation of TaC, which facilitates carrier tunneling, and simultaneously increases the concentration of electrically active defects. As a case study, the BNDD/Ta/Ti/Si electrode is further employed to assemble a redox‐electrolyte‐based supercapacitor device with enhanced performance. In summary, the study not only sheds light on the intricate relationship between interlayer composition, charge transfer, and electrochemical performance but also demonstrates the potential of tailored interlayer design to unlock new capabilities in diamond‐based electrochemical devices.Source Type:Article5
