Chen, Bin
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Publication Access status: Metadata only , A Highly Active Porous Mo2C-Mo2N Heterostructure on Carbon Nanowalls/Diamond for a High-Current Hydrogen Evolution Reaction(2024); ; ; ; Developing non-precious metal-based electrocatalysts operating in high-current densities is highly demanded for the industry-level electrochemical hydrogen evolution reaction (HER). Here, we report the facile preparation of binder-free Mo2C-Mo2N heterostructures on carbon nanowalls/diamond (CNWs/D) via ultrasonic soaking followed by an annealing treatment. The experimental investigations and density functional theory calculations reveal the downshift of the d-band center caused by the heterojunction between Mo2C/Mo2N triggering highly active interfacial sites with a nearly zero ∆GH* value. Furthermore, the 3D-networked CNWs/D, as the current collector, features high electrical conductivity and large surface area, greatly boosting the electron transfer rate of HER occurring on the interfacial sites of Mo2C-Mo2N. Consequently, the self-supporting Mo2C-Mo2N@CNWs/D exhibits significantly low overpotentials of 137.8 and 194.4 mV at high current densities of 500 and 1000 mA/cm2, respectively, in an alkaline solution, which far surpass the benchmark Pt/C (228.5 and 359.3 mV) and are superior to most transition-metal-based materials. This work presents a cost-effective and high-efficiency non-precious metal-based electrocatalyst candidate for the electrochemical hydrogen production industry.Source Type:Article5 - Some of the metrics are blocked by yourconsent settings
Publication Access status: Metadata only , Covalently‐Bonded Diaphite Nanoplatelet with Engineered Electronic Properties of Diamond(2024); ; ; ; Diamond, as a highly promising “extreme” semiconductor material, necessitates electronic property engineering to unleash its full potential in electronic and photonic devices. In this work, the diaphite nanoplatelet, consisting of (11) planes of diamond nanoplatelet covalently bonded with graphite (0001) planes, is facilely synthesized using one‐step microwave plasma enhanced chemical vapor deposition method. The high‐energy plasma created by the pillar plays a crucial role in the formation. Importantly, altered electronic and optical properties are determined in the diaphite nanoplatelet through electron energy loss spectrum, density functional theory calculations, and cathodoluminescence spectroscopy. It is revealed that the strong sp 3 /sp 2 ‐hybridized interfacial covalent bonding in the diaphite nanoplatelet induces the electron transfer from diamond to graphite. This modulates the electronic structure of the near‐interface layer of diamond and triggers a new local trapping band below the conduction band minimum within the bandgap. Consequently, the covalently‐bonded diaphite exhibits a different optical emission characteristic ranging from 2.5 to 3.64 eV, featuring a significant peak blueshift of 430 meV compared to the H‐terminated diamond. This work demonstrates a novel method to engineer the electronic properties of diamond, opening avenues for functional semiconductor device applications of diamond.Source Type:Article1
